DS1250Y/AB
ABSOLUTE MAXIMUM RATINGS
Voltage on Any Pin Relative to Ground
Operating Temperature
Commercial:
Industrial:
Storage Temperature
EDIP
PowerCap
Lead Temperature (soldering, 10s)
Soldering Temperature (reflow, PowerCap)
-0.3V to +6.0V
0°C to +70°C
-40°C to +85°C
-40°C to +85°C
-55°C to +125°C
+260°C
+260°C
Note: EDIP is wave or hand soldered only.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect
reliability.
RECOMMENDED DC OPERATING CONDITIONS
(T A : See Note 10)
PARAMETER
DS1250AB Power Supply
SYMBOL
V CC
MIN
4.75
TYP
5.0
MAX
5.25
UNITS
V
NOTES
Voltage
DS1250Y Power Supply Voltage
Logic 1
Logic 0
V CC
V IH
V IL
4.5
2.2
0.0
5.0
5.5
V CC
+0.8
V
V
V
DC ELECTRICAL CHARACTERISTICS (V CC = 5V ± 5% for DS1250AB)
(T A : See Note 10) (V CC = 5V ± 10% for DS1250Y)
PARAMETER
Input Leakage Current
I/O Leakage Current CE ≥ V IH ≤ V CC
SYMBOL
I IL
I IO
MIN
-1.0
-1.0
TYP
MAX
+1.0
+1.0
UNITS
μ A
μ A
NOTES
Output Current @ 2.4V
Output Current @ 0.4V
I OH
I OL
-1.0
2.0
mA
mA
Standby Current CE =2.2V
Standby Current CE =V CC -0.5V
Operating Current
I CCS1
I CCS2
I CCO1
200
50
600
150
85
μA
μA
mA
Write Protection Voltage (DS1250AB)
Write Protection Voltage (DS1250Y)
V TP
V TP
4.50
4.25
4.62
4.37
4.75
4.5
V
V
CAPACITANCE
(T A = +25°C)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C IN
C I/O
MIN
TYP
5
5
MAX
10
10
UNITS
pF
pF
NOTES
4 of 10
相关PDF资料
DS1250W-150+ IC NVSRAM 4MBIT 150NS 32DIP
DS1250Y-100IND IC NVSRAM 4MBIT 100NS 32DIP
DS1258W-100# IC NVSRAM 2MBIT 100NS 40DIP
DS1258Y-100# IC NVSRAM 2MBIT 100NS 40DIP
DS1265AB-70IND+ IC NVSRAM 8MBIT 70NS 36DIP
DS1270W-100IND# IC NVSRAM 16MBIT 100NS 36DIP
DS1270W-100IND IC NVSRAM 16MBIT 100NS 36DIP
DS1270Y-70IND# IC NVSRAM 16MBIT 70NS 36DIP
相关代理商/技术参数
DS1250ABL-100 制造商:未知厂家 制造商全称:未知厂家 功能描述:NVRAM (Battery Based)
DS1250ABL-100-IND 制造商:未知厂家 制造商全称:未知厂家 功能描述:NVRAM (Battery Based)
DS1250ABL-70 制造商:未知厂家 制造商全称:未知厂家 功能描述:NVRAM (Battery Based)
DS1250ABL-70-IND 制造商:未知厂家 制造商全称:未知厂家 功能描述:NVRAM (Battery Based)
DS1250ABP-100 功能描述:NVRAM 4096K NV SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube
DS1250ABP-100+ 功能描述:NVRAM 4096K NV SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube
DS1250ABP-100-IND 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:4096k Nonvolatile SRAM
DS1250ABP-70 功能描述:NVRAM 4096K NV SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube